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NSUF 18-1194: Transmutation doping of hexagonal boron nitride

The electrical and optical properties of hexagonal boron nitride, a wide energy bandgap semiconductor, would be modified by transmutation doping, converting a fraction of the...

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Projects: NSUF 18-1194: Transmutation doping of hexagonal boron nitride Organisations: NSUF

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  • Decoherence of V B spin defects in monoisotopic hexagonal boron nitride
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    Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals...
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