NSUF 22-4462: Radiation Tolerant Neuromorphic Computing System using 3-D NAND Flash Memory

The key objective of this proposal is to evaluate the reliability of Artificial Neural Network (ANN) hardware implemented with 3-D NAND flash memory array under radiation environment. We will combine both experimental characterization and numerical simulation of an ANN performance to achieve our objective. We also propose a radiation effects compensation technique for 3-D NAND memory that may significantly improve reliability of ANN hardware under irradiation.

The project will enable machine learning applications in the nuclear environment. The proposed research will advance our knowledge of radiation reliability physics of 3-D NAND flash memory which has been recently introduced in the consumer market. In addition, it will enable design of a reliable neuromorphic computing system for several nuclear applications. We plan to complete our study in nine months’ time.

Допълнителна информация

Поле	Стойност
Awarded Institution	University of Alabama
Embargo End Date	2026-02-27
Facility Tech Lead	Raymond Cao
NSUF Call	FY 2022 RTE 1st Call
PI	Biswajit Ray
Project Member	Dr. Biswajit Ray, Assistant Professor - University of Alabama (https://orcid.org/0000-0002-5890-1368)
Project Notes	Awarded on 06/14/2022
Project Type	RTE
RTE Number	4462