NSUF 23-4722: Investigation of evolution of defects in β-Ga2O3 under irradiation and high temperature

At the ANL’s IVEM facility, three sets of experimental conditions will be used to investigate: effect of high temperature, effect of irradiation, and combined effect of high temperature and irradiation. Cross-sectional TEM specimens of β-Ga2O3, β-Ga2O3/Al, and β-Ga2O3/Pt will be irradiated at room temperature (25 ºC) up to 10 dpa using 1 MeV Kr^(2+) ions. Another three samples will be heated up to high temperatures (500 ºC for β-Ga2O3/Al and 900 ºC for β-Ga2O3 and β-Ga2O3/Pt) and characterized along the way. Finally, one β-Ga2O3/Al sample will be heated up to 500 ºC and irradiated up to 10 dpa while the β-Ga2O3 and the β-Ga2O3/Pt samples will be heated up to 900 ºC and irradiated up to 10 dpa. It is expected that the beam flux remains mostly constant around 10^11 ions/cm^2∙s. An estimation of the irradiation dose rate in displacement per atom per second (dpa/s) will be done using the Stopping and Range of Ions in Matter (SRIM) software package. The Kinchin-Pease condition, assuming 28 eV/atom as the displacement energy, and default densities from the software will be used. The evolution of the microstructure under irradiation will be observed at each dose step (i.e. 1 dpa, 2 dpa, 3 dpa, etc.). For the samples with deposited electrodes, the metal-semiconductor junction will be imaged persistently to note the behavior of the interface.

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Поле	Стойност
Awarded Institution	North Carolina State University
Embargo End Date	2026-02-27
Facility Tech Lead	Jason Hou, Wei-Ying Chen
NSUF Call	FY 2023 RTE 2nd Call
PI	Ge Yang
PIE Facilities	Intermediate Voltage Electron Microscopy (IVEM)-Tandem Facility
Project Member	Ge Yang, Assistant Professor - North Carolina State University
Project Type	RTE