NSUF 18-1194: Transmutation doping of hexagonal boron nitride
The electrical and optical properties of hexagonal boron nitride, a wide energy bandgap semiconductor, would be modified by transmutation doping, converting a fraction of the boron-10 isotopes to lithium by nuclear reactions. This non-thermal, nonequilibrium process will produce equal concentrations of lithium atoms and boron vacancies, an ideal combination for the targeted effect. Hexagonal boron nitride single crystals will be employed, to avoid the complicating effects of grain boundaries. Samples will be irradiated at two different doses, so the effects of lithium concentration on the properties can be established. The samples will be irradiated at Ohio State University Nuclear Reactor Laboratory. The electrical, structural, and optical properties of the irradiated samples will be studied by Hall effect measurements, Raman spectroscopy, transmission electron microscopy, and photoluminescence, to establish the effects of dose and post-irradiation annealing at Kansas State University. This preliminary study will be completed within nine months of its initiation. The results of this study will be published in a scientific journal. This project may establish a method of modulating the electrical properties of hBN. Successful doping of hBN would enable the fabrication of solid state neutron detectors as well as many other types of electronic devices.
Additional Info
| Field | Value |
|---|---|
| Abstract | The electrical and optical properties of hexagonal boron nitride, a wide energy bandgap semiconductor, would be modified by transmutation doping, converting a fraction of the boron-10 isotopes to lithium by nuclear reactions. This non-thermal, nonequilibrium process will produce equal concentrations of lithium atoms and boron vacancies, an ideal combination for the targeted effect. Hexagonal boron nitride single crystals will be employed, to avoid the complicating effects of grain boundaries. Samples will be irradiated at two different doses, so the effects of lithium concentration on the properties can be established. The samples will be irradiated at Ohio State University Nuclear Reactor Laboratory. The electrical, structural, and optical properties of the irradiated samples will be studied by Hall effect measurements, Raman spectroscopy, transmission electron microscopy, and photoluminescence, to establish the effects of dose and post-irradiation annealing at Kansas State University. This preliminary study will be completed within nine months of its initiation. The results of this study will be published in a scientific journal. This project may establish a method of modulating the electrical properties of hBN. Successful doping of hBN would enable the fabrication of solid state neutron detectors as well as many other types of electronic devices. |
| Award Announced Date | 2018-02-01T14:14:21.65 |
| Awarded Institution | None |
| Facility | None |
| Facility Tech Lead | Raymond Cao |
| Irradiation Facility | None |
| PI | James Edgar |
| PI Email | [email protected] |
| Project Type | RTE |
| RTE Number | 1194 |