NSUF 18-1255: Ion irradiation of Aerosol Jet Printed Cu, Ag, and Ni Structures
To demonstrate the feasibility of AJP in the nuclear industry, our focus will be on the ‘proof of principle’ of passive AJP-based temperature sensors by developing fundamental knowledge about the microstructural, electrical and thermal effects of irradiation on commercially available AJP electronic grade nanoparticle inks. Experiments will aim to compare the electrical, microstructural and thermal properties of AJP structures and their bulk counterparts in order to facilitate the application of AJP for in-pile sensor development. Initial investigations have shown that printed structures have different failure mechanisms than that of their bulk counterparts and these phenomena must be characterized before continued development of AJP-based sensors.
Scope of Work For this Rapid Turn around Experiment (RTE) and in collaboration with staff at Michigan Ion Beam Laboratory (MIBL), we propose to use self-ion irradiation at MIBL as a surrogate for neutron irradiation as a preliminary screening on the radiation response of the microstructural and electronic properties of Cu, Ag, and Ni AJP structures. Preliminary calculations using SRIM have shown that a 1 to 2 MeV self-ion irradiation will fully penetrate the printed structures having a maximal thickness of 0.50 µm. This step will initiate the rapid down selection process necessary in developing a Printable Nuclear Grade Materials (PrintNG) library. The timeframe for this irradiation at MIBL is 12 days of total beamline time with 10 days of actual beamtime. Three groups (Cu, Ni and Ag) of 20 four-point structures will be printed on 2 cm x 2 cm sapphire wafers. Each group will include three sets where Cu and Ag will be annealed at 500 °C, 600 °C or 700 °C and Ni 600 °C, 800 °C or 1000 °C at with each set will include three different samples. The difference between samples will be the irradiation dose (0.01 dpa, 0.1 dpa, and 1 dpa) that they are subjected to at 1-2 MeV. Furthermore, a total of 27 samples will be irradiated with Cu and Ag groups being printed on the same wafer having a total area of 1 cm x 1 cm, and Ni groups will be printed within an area of 1 cm x 0.5 cm. According to the MIBL director, while the sample size may appear large the doses are small and hence the irradiation times are short, which allows for this sample number to be feasible for the proposed instrument time. The desired test temperature for each sample would be less than or equal to the annealing temperature. After this RTE irradiation at MIBL is complete, the structures will be sent to Boise State University for characterization. Examinations will include electrical characterization utilizing an Agilent 4284 LCR meter, SEM and TEM, housed at Boise State University. Shipment to BSU and examinations will be all be performed at Boise State University, and will be covered under DOE Contracts with Idaho National Laboratory. Results of these RTE evaluations will be documented in appropriate publications and presented at conferences.
Additional Info
| Field | Value |
|---|---|
| Abstract | To demonstrate the feasibility of AJP in the nuclear industry, our focus will be on the ‘proof of principle’ of passive AJP-based temperature sensors by developing fundamental knowledge about the microstructural, electrical and thermal effects of irradiation on commercially available AJP electronic grade nanoparticle inks. Experiments will aim to compare the electrical, microstructural and thermal properties of AJP structures and their bulk counterparts in order to facilitate the application of AJP for in-pile sensor development. Initial investigations have shown that printed structures have different failure mechanisms than that of their bulk counterparts and these phenomena must be characterized before continued development of AJP-based sensors. Scope of Work For this Rapid Turn around Experiment (RTE) and in collaboration with staff at Michigan Ion Beam Laboratory (MIBL), we propose to use self-ion irradiation at MIBL as a surrogate for neutron irradiation as a preliminary screening on the radiation response of the microstructural and electronic properties of Cu, Ag, and Ni AJP structures. Preliminary calculations using SRIM have shown that a 1 to 2 MeV self-ion irradiation will fully penetrate the printed structures having a maximal thickness of 0.50 µm. This step will initiate the rapid down selection process necessary in developing a Printable Nuclear Grade Materials (PrintNG) library. The timeframe for this irradiation at MIBL is 12 days of total beamline time with 10 days of actual beamtime. Three groups (Cu, Ni and Ag) of 20 four-point structures will be printed on 2 cm x 2 cm sapphire wafers. Each group will include three sets where Cu and Ag will be annealed at 500 °C, 600 °C or 700 °C and Ni 600 °C, 800 °C or 1000 °C at with each set will include three different samples. The difference between samples will be the irradiation dose (0.01 dpa, 0.1 dpa, and 1 dpa) that they are subjected to at 1-2 MeV. Furthermore, a total of 27 samples will be irradiated with Cu and Ag groups being printed on the same wafer having a total area of 1 cm x 1 cm, and Ni groups will be printed within an area of 1 cm x 0.5 cm. According to the MIBL director, while the sample size may appear large the doses are small and hence the irradiation times are short, which allows for this sample number to be feasible for the proposed instrument time. The desired test temperature for each sample would be less than or equal to the annealing temperature. After this RTE irradiation at MIBL is complete, the structures will be sent to Boise State University for characterization. Examinations will include electrical characterization utilizing an Agilent 4284 LCR meter, SEM and TEM, housed at Boise State University. Shipment to BSU and examinations will be all be performed at Boise State University, and will be covered under DOE Contracts with Idaho National Laboratory. Results of these RTE evaluations will be documented in appropriate publications and presented at conferences. |
| Award Announced Date | 2018-02-01T14:18:44.947 |
| Awarded Institution | None |
| Facility | None |
| Facility Tech Lead | Kevin Field |
| Irradiation Facility | None |
| PI | David Estrada |
| PI Email | [email protected] |
| Project Type | RTE |
| RTE Number | 1255 |