NSUF 20-SAM2: Neutron Transmutation Doping of High-Purity SiC
This study seeks to understand the complex relationship between the electronic structure and the thermal and mechanical properties. The study will be achieved by using neutron transmutation doping (NTD) to produce successively doped, decade levels of SiC during an ATR irradiation. A series of experiment capsules will be loaded with identical sets of high purity SiC specimens and irradiated to a pre-determined thermal fluence amount. A capsule will be pulled from the reactor after its fluence target is reached, and sent for dis-assembly and PIE, while the remaining capsules will continue to be irradiated.
Additional Info
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Abstract | This study seeks to understand the complex relationship between the electronic structure and the thermal and mechanical properties. The study will be achieved by using neutron transmutation doping (NTD) to produce successively doped, decade levels of SiC during an ATR irradiation. A series of experiment capsules will be loaded with identical sets of high purity SiC specimens and irradiated to a pre-determined thermal fluence amount. A capsule will be pulled from the reactor after its fluence target is reached, and sent for dis-assembly and PIE, while the remaining capsules will continue to be irradiated. |
Award Announced Date | 2022-08-24T00:00:00 |
Awarded Institution | None |
Facility | None |
Facility Tech Lead | |
Irradiation Facility | None |
PI | None |
PI Email | [email protected] |
Project Type | Library Submission |
RTE Number | None |