NSUF 23-1877: Investigation of Simultaneous Irradiation and Creep Behavior of Cr Thin Films
In this proposal, we aim to investigate the simultaneous irradiation and creep behavior of Cr thin films. Many current works focus on understanding the mechanical behavior of samples after irradiation, in which the radiation-induced damages are in a static state. In the proposed experiments, we utilize a custom-built micro-tensile tester that can perform high-temperature deformation via MEMS-based Joule heating. The tester will be placed in an ion implanter to irradiate the sample while applying a constant load at a high temperature. Cr thin films will be used as the model material. The experiments consist of three parts. (1) Sample fabrication - Cr (~20 microns thick) thin films will be fabricated via physical vapor deposition. The films will then be annealed to remove most crystallographic defects and residual stress. The as-annealed films will be used as the baseline for the subsequent tasks. (2) Simultaneous ion implantation and creep test - the micro-tensile tester will be placed in an ion implanter. The sample will be subjected to a constant load (60% of the yield strength) at an elevated temperature (e.g., 600 C) and implanted by protons at the 1 dpa damage level for 1 week. Two additional baseline materials will also be prepared, in which one with only irradiation and the other only with creep. (3) Post-irradiation characterization - TEM will be used to reveal the nano-scale damage mechanism of samples exposed to both irradiation and creep in comparison to the baseline groups. The results generated from this work will offer direct experimental evidence to help understand the dynamic interplay of radiation-induced and deformation-induced defects and, consequently, their roles in the irradiation creep behavior of materials. Moreover, the approach designed in this proposal may serve as a high throughput technique that can be adopted to study the irradiation creep behavior of nuclear materials to a greater extent.
Additional Info
| Field | Value |
|---|---|
| Abstract | In this proposal, we aim to investigate the simultaneous irradiation and creep behavior of Cr thin films. Many current works focus on understanding the mechanical behavior of samples after irradiation, in which the radiation-induced damages are in a static state. In the proposed experiments, we utilize a custom-built micro-tensile tester that can perform high-temperature deformation via MEMS-based Joule heating. The tester will be placed in an ion implanter to irradiate the sample while applying a constant load at a high temperature. Cr thin films will be used as the model material. The experiments consist of three parts. (1) Sample fabrication - Cr (~20 microns thick) thin films will be fabricated via physical vapor deposition. The films will then be annealed to remove most crystallographic defects and residual stress. The as-annealed films will be used as the baseline for the subsequent tasks. (2) Simultaneous ion implantation and creep test - the micro-tensile tester will be placed in an ion implanter. The sample will be subjected to a constant load (60% of the yield strength) at an elevated temperature (e.g., 600 C) and implanted by protons at the 1 dpa damage level for 1 week. Two additional baseline materials will also be prepared, in which one with only irradiation and the other only with creep. (3) Post-irradiation characterization - TEM will be used to reveal the nano-scale damage mechanism of samples exposed to both irradiation and creep in comparison to the baseline groups. The results generated from this work will offer direct experimental evidence to help understand the dynamic interplay of radiation-induced and deformation-induced defects and, consequently, their roles in the irradiation creep behavior of materials. Moreover, the approach designed in this proposal may serve as a high throughput technique that can be adopted to study the irradiation creep behavior of nuclear materials to a greater extent. |
| Award Announced Date | 2023-02-08T10:49:53.267 |
| Awarded Institution | None |
| Facility | None |
| Facility Tech Lead | Lin Shao, Yaqiao Wu |
| Irradiation Facility | Accelerator Laboratory |
| PI | Kelvin Xie |
| PI Email | [email protected] |
| Project Type | RTE |
| RTE Number | 4565 |