NSUF 23-4722: Investigation of evolution of defects in β-Ga2O3 under irradiation and high temperature

At the ANL’s IVEM facility, three sets of experimental conditions will be used to investigate: effect of high temperature, effect of irradiation, and combined effect of high temperature and irradiation. Cross-sectional TEM specimens of β-Ga2O3, β-Ga2O3/Al, and β-Ga2O3/Pt will be irradiated at room temperature (25 ºC) up to 10 dpa using 1 MeV Kr^(2+) ions. Another three samples will be heated up to high temperatures (500 ºC for β-Ga2O3/Al and 900 ºC for β-Ga2O3 and β-Ga2O3/Pt) and characterized along the way. Finally, one β-Ga2O3/Al sample will be heated up to 500 ºC and irradiated up to 10 dpa while the β-Ga2O3 and the β-Ga2O3/Pt samples will be heated up to 900 ºC and irradiated up to 10 dpa. It is expected that the beam flux remains mostly constant around 10^11 ions/cm^2∙s. An estimation of the irradiation dose rate in displacement per atom per second (dpa/s) will be done using the Stopping and Range of Ions in Matter (SRIM) software package. The Kinchin-Pease condition, assuming 28 eV/atom as the displacement energy, and default densities from the software will be used. The evolution of the microstructure under irradiation will be observed at each dose step (i.e. 1 dpa, 2 dpa, 3 dpa, etc.). For the samples with deposited electrodes, the metal-semiconductor junction will be imaged persistently to note the behavior of the interface.

Additional Info

Field	Value
Abstract	At the ANL’s IVEM facility, three sets of experimental conditions will be used to investigate: effect of high temperature, effect of irradiation, and combined effect of high temperature and irradiation. Cross-sectional TEM specimens of β-Ga2O3, β-Ga2O3/Al, and β-Ga2O3/Pt will be irradiated at room temperature (25 ºC) up to 10 dpa using 1 MeV Kr^(2+) ions. Another three samples will be heated up to high temperatures (500 ºC for β-Ga2O3/Al and 900 ºC for β-Ga2O3 and β-Ga2O3/Pt) and characterized along the way. Finally, one β-Ga2O3/Al sample will be heated up to 500 ºC and irradiated up to 10 dpa while the β-Ga2O3 and the β-Ga2O3/Pt samples will be heated up to 900 ºC and irradiated up to 10 dpa. It is expected that the beam flux remains mostly constant around 10^11 ions/cm^2∙s. An estimation of the irradiation dose rate in displacement per atom per second (dpa/s) will be done using the Stopping and Range of Ions in Matter (SRIM) software package. The Kinchin-Pease condition, assuming 28 eV/atom as the displacement energy, and default densities from the software will be used. The evolution of the microstructure under irradiation will be observed at each dose step (i.e. 1 dpa, 2 dpa, 3 dpa, etc.). For the samples with deposited electrodes, the metal-semiconductor junction will be imaged persistently to note the behavior of the interface.
Award Announced Date	2023-06-01T09:07:50.817
Awarded Institution	None
Facility	None
Facility Tech Lead	Ayman Hawari , Wei-Ying Chen
Irradiation Facility	None
PI	Ge Yang
PI Email	[email protected]
Project Type	RTE
RTE Number	None