NSUF 25-5453: Irradiation to enhance NZFMR signal by increasing defects

This project aims to investigate the effect of controlled ion irradiation on the electrical performance of SiC devices by introducing sub-micron-scale defects at targeted depths near the PN junction. Specifically, we will irradiate SiC samples with Carbon and Gallium ions at carefully chosen energies (~1.1 MeV and ~2.25 MeV, respectively) to produce vacancy-type defects that peak in concentration just beyond the junction (~1100 nm), with a distribution tailing back toward 900 nm. Prior experiments revealed that improper dose and beam current led to irreversible degradation of device behavior. Using depth-resolved Monte Carlo simulations (e.g., SRIM/TRIM), we have designed an optimized irradiation protocol to generate controlled defect distributions while minimizing sample damage or overheating. Up to six irradiated and three control samples will be analyzed via electrical (I–V, C–V) and structural (SEM, Raman) characterization. The experiment will evaluate defect-mediated enhancement of the signal response and determine optimal conditions for localized defect creation in wide-bandgap semiconductors. This research will provide quantitative insight into defect engineering at the sub-micron scale, a critical requirement for radiation-hardened electronics, sensor devices, and high-temperature optoelectronics. The results may lead to a new approach in tailoring material properties via shallow defect profiles, with potential applications in both space- and reactor-based radiation environments.

Additional Info

Field	Value
Awarded Institution	QuantCAD
DOI	10.46936/NSUF/60015705
Embargo End Date	2028-01-22
Facility Tech Lead	Christopher Smyth
Irradiation Facilities	SNL Ion Beam Laboratory
NSUF Call	FY 2025 Super RTE Call
PI	Ivan Viti
PIE Facilities	SNL Ion Beam Laboratory
Prep Facilities	SNL Ion Beam Laboratory
Project Member	Dr Ivan Viti - QuantCAD (https://orcid.org/0009-0003-5858-6761)
Project Type	RTE