NSUF 17-CINR-12957: X-ray Characterization of Atomistic Defects Causing Irradiation Creep of SiC

Silicon carbide (SiC)-based accident tolerant fuel (ATF) cladding of light water reactors is continuing to undergo development at ORNL under support of the Office of Nuclear Energy’s Advanced Fuels Campaign, Fuel Cycle Research & Development program. An important task is the establishment of the thermo-mechanical analysis capability to predict in-pile performance and failure probability of the cladding. Irradiation creep is known to be a key property to model the stress state under irradiation. In short, and especially for SiC materials that possess very limited strain tolerance, irradiation creep provides an important stress mitigating function.We have experimentally evaluated neutron irradiation creep of SiC materials at 380–800°C up to 30 dpa, using a bend stress relaxation test in the HFIR. In addition, we conducted an in-pile instrumentation creep experiment of SiC at 300°C in the Halden facility. Analysis revealed that (1) irradiation creep strain was very small when compared to metals, (2) transient irradiation creep operated below ~1 dpa, and (3) secondary creep operated with a stress-normalized creep rate of ~1×10-7 [dpa MPa]-1 beyond the initial transient. Our study showed that the irradiation creep behavior could be modeled by anisotropic evolution of multi-dimensional radiation defects due to the applied stress. However, the microstructures observed by transmission electron microscopy (TEM) could not fully support this model, potentially due to the presence of atomistic defects which cannot be observed by conventional TEM. Since the creep mechanism is not physically well understood, a previous parametric thermo-mechanical analysis on SiC composites did not provided an accurate result.To better understand the radiation creep mechanism from an atomic point of view, we propose to conduct synchrotron-based X-ray diffraction (XRD) experiments on SiC neutron irradiated with and without applied stress at the National Synchrotron Light Source-II (NSLS-II). The world-class high brightness of the X-ray source and the high-resolution analysis capability at the XRD beamline enable accurate structural determination of the irradiated SiC materials. First, we will conduct powder XRD and pair distribution function (PDF) experiments in year one, followed by a small angle x-ray scattering experiment (SAXS) in year two. We expect peak shifting and/or peak broadening in the XRD patterns, depending on the magnitude of the applied stress under radiation. Analysis of such stress effects withquantitative XRD methods (such as Rietveld refinement) will provide better understanding of irradiation creep of SiC. More specifically, quantification of changes in the lattice swelling due to the applied stress will enable us to improve our proposed mechanistic creep model. The size, shape and number density of the small atomic-scale defects (0.5-2 nm in size) will be determined from the SAXS experiments. Characterization of these defects will also aid in confirming our assumption that anisotropic evolution of multi-dimensional radiation defects has a non-negligible effect on the radiation-induced creep.

מידע נוסף

שדה ערך
Awarded Institution Oak Ridge National Laboratory
CINR Number 17-12957
Embargo End Date 2032-01-16
NSUF Call FY 2017 CINR
PI Takaaki Koyanagi
Project Member Dr. Takaaki Koyanagi, Research associate - Oak Ridge National Laboratory (https://orcid.org/0000-0001-7272-4049)
Project Type CINR
Publication Raman spectroscopy of neutron irradiated silicon carbide: Correlation among Raman spectra, swelling, and irradiation temperature Takaaki Koyanagi, Yutai Katoh Journal of Raman Spectroscopy 49 2018-10-01 https://onlinelibrary.wiley.com/doi/full/10.1002/jrs.5425
Publication X-ray characterization of anisotropic defect formation in SiC under irradiation with applied stress David Sprouster, Takaaki Koyanagi, Lance Snead, Yutai Katoh Scripta Materialia 197 2021-02-06 https://doi.org/10.1016/j.scriptamat.2021.113785
Publication Wigner Energy of SiC Irradiated to High Levels of Swelling (#16-652) David Sprouster Phys. Rev. Materials 5 2021-10-08 https://dx.doi.org/10.1103/PhysRevMaterials.5.103601
Publication Atomic and microstructural origins of stored energy release in neutron-irradiated silicon carbide David Sprouster Physical Review Materials 5 2021-09-20 https://doi.org/10.1103/PhysRevMaterials.5.103601
RTE Number 3052