NSUF 18-1525: Neutron Irradiation of Ga2O3 to Identify Native Point Defects
We propose to study the effect of forming gas (FG) annealing on the native point defects created by neutron irradiation of Ga2O3, an important new semiconductor for high power, high voltage applications. We will use this understanding to optimize the reduction of native point defects in Ga2O3 created by irradiation to lower compensating centers and trapping sites that cause undesirable recombination and doping reduction. We propose to use nanometer-scale depth-resolved cathodoluminescence spectroscopy (DRCLS), surface photovoltage spectroscopy (SPS), and Hall effect measurements over a 6-month period to study the dependence of free carrier density n, mobility µ, donor density ND and acceptor density NA on neutron irradiation dose and subsequent forming gas (FG) anneals. With this combination of techniques and processing, we aim to understand the effect of neutron irradiation on the creation of native point defects such as gallium vacancies VGa, oxygen vacancies VO, Ga interstitials GaI, and related complexes. Samples to be irradiated include beta-Ga2O3 grown by low pressure chemical vapor deposition (LPCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), and edge-defined film-fed growth (EFG). The results of this study will be used to further identify the physical nature of defects whose luminescence and energy levels within the beta-Ga2O3 have recently been reported.
추가 정보
| 필드 | 값 |
|---|---|
| Abstract | We propose to study the effect of forming gas (FG) annealing on the native point defects created by neutron irradiation of Ga2O3, an important new semiconductor for high power, high voltage applications. We will use this understanding to optimize the reduction of native point defects in Ga2O3 created by irradiation to lower compensating centers and trapping sites that cause undesirable recombination and doping reduction. We propose to use nanometer-scale depth-resolved cathodoluminescence spectroscopy (DRCLS), surface photovoltage spectroscopy (SPS), and Hall effect measurements over a 6-month period to study the dependence of free carrier density n, mobility µ, donor density ND and acceptor density NA on neutron irradiation dose and subsequent forming gas (FG) anneals. With this combination of techniques and processing, we aim to understand the effect of neutron irradiation on the creation of native point defects such as gallium vacancies VGa, oxygen vacancies VO, Ga interstitials GaI, and related complexes. Samples to be irradiated include beta-Ga2O3 grown by low pressure chemical vapor deposition (LPCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD), and edge-defined film-fed growth (EFG). The results of this study will be used to further identify the physical nature of defects whose luminescence and energy levels within the beta-Ga2O3 have recently been reported. |
| Award Announced Date | 2018-09-17T00:00:00 |
| Awarded Institution | Oak Ridge National Laboratory |
| Facility | High-Flux Isotope Reactor |
| Facility Tech Lead | Kory Linton, Raymond Cao |
| Irradiation Facility | None |
| PI | Leonard Brillson |
| PI Email | [email protected] |
| Project Type | RTE |
| RTE Number | 1525 |