NSUF 23-4754: Characterization of the Total-Dose Effect on State-of-the-Art Static Random-Access Memory

The key objective of this proposal is to evaluate the total-ionizing-dose effects on the state-of-the-art commercial SRAM memory technology. Strong ionizing radiation can cause significant damage to SRAM memory elements, severely degrading their performance, causing memory failures, and resulting in a significant increase in power consumption for device operation. In this project, we will use commercial off-the-shelf (COTS) SRAM chips to evaluate the effects of ionizing radiation. Irradiation experiments will be performed at the Ohio State University’s Nuclear Reactor Laboratory in the underwater Gamma Irradiator using a Co-60 source. Based on experimental characterization, we will propose mitigation strategies to combat the radiation effects and allow for improved memory performance in radiation-prone environments. The proposed strategies do not require modifications to existing device fabrication techniques and can be implemented using system algorithms. The proposed research will advance our knowledge of radiation reliability physics for state-of-the-art SRAM memory. Additionally, it will enable an on-chip dosimetry solution for the nuclear reactor environment. We plan to complete our study in nine months' time.

Нэмэлт мэдээлэл

Талбар	Утга
Awarded Institution	The University of Alabama in Huntsville
Embargo End Date	2026-02-27
Facility Tech Lead	Raymond Cao
Irradiation Facilities	Ohio State University Research Reactor
NSUF Call	FY 2023 RTE 3rd Call
PI	Biswajit Ray
Project Member	Dr. Biswajit Ray, Assistant Professor - University of Alabama (https://orcid.org/0000-0002-5890-1368)
Project Type	RTE